PHOTOREFLECTANCE STUDY OF GALLIUM-ARSENIDE GROWN ON SI

被引：13

作者：

DUTTA, M ^{[1
]}

SHEN, H ^{[1
]}

VERNON, SM ^{[1
]}

DIXON, TM ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 17期

关键词：

D O I：

10.1063/1.104121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature linear polarized photoreflectance is used to study the stress and its release in thick GaAs grown on Si. We find that the GaAs layer is mainly composed of two regions with two kinds of stress, biaxial and uniaxial. Four features, two from each region due to the split valence band, are observed. Their polarization selection rules enable us to distinguish the nature of the strain as well as the nature of the transitions.

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页码：1775 / 1777

页数：3

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