TEMPERATURE EFFECTS ON THE PHOTOLUMINESCENCE OF GAAS GROWN ON SI

被引：54

作者：

CHEN, Y ^{[1
]}

FREUNDLICH, A ^{[1
]}

KAMADA, H ^{[1
]}

NEU, G ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：45 / 47

页数：3

共 18 条

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[2]

CHANDERSEKHAR M, 1977, PHYS REV B, V15, P211

[3] DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI [J].

DEPPE, DG ;

HOLONYAK, N ;

HSIEH, KC ;

NAM, DW ;

PLANO, WE ;

MATYI, RJ ;

SHICHIJO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (21) :1812-1814

[4]

DUNCAN WM, 1986, J APPL PHYS, V59, P2162

[5]

FISHER R, 1986, J APPL PHYS, V60, P1640

[6] HETEROEPITAXY OF GAAS ON SI - THE EFFECT OF INSITU THERMAL ANNEALING UNDER ASH3 [J].

FREUNDLICH, A ;

GRENET, JC ;

NEU, G ;

LEYCURAS, A ;

VERIE, C .

APPLIED PHYSICS LETTERS, 1988, 52 (23) :1976-1978

[7] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J].

FREUNDLICH, A ;

LEYCURAS, A ;

GRENET, JC ;

VERIE, C ;

HUONG, PV .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1352-1354

[8] INFLUENCE OF MOVPE GROWTH-PARAMETERS ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS ON SI(100) [J].

FREUNDLICH, A ;

GRENET, JC ;

NEU, G ;

LEYCURAS, A ;

VERIE, C ;

GIBART, P ;

LANDA, G ;

CARLES, R .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :487-493

[9]

FREUNDLICH A, UNPUB

[10]

FREUNDLICH A, 1988, 19TH INT C PHYS SEM

← 1 2 →