HIGH-PERFORMANCE THIN-FILM SILICON-ON-INSULATOR CMOS TRANSISTORS IN POROUS ANODIZED SILICON

[1] ARMSTRONG GA, 1986, 2ND P INT C PROC DEV, P446

[2] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J]. ELECTRONICS LETTERS, 1986, 22 (24) : 1291 - 1293

[3] BRUMHEAD D, 1987, 87 P ESSDERC BOL, P391

[4] COLINGE JP, 1986, ELECTRON LETT, V48, P70

[5] HIGH-PERFORMANCE SOI-CMOS TRANSISTORS IN OXYGEN-IMPLANTED SILICON WITHOUT EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 291 - 293

[6] EARWAKER LG, 1988, 1988 EUR SIL INS WOR

[7] Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7

[8] HOLSTROM RP, 1983, APPL PHYS LETT, V42, P386

[9] POROUS SILICON TECHNIQUES FOR SOI STRUCTURES [J]. IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (06): : 3 - 7

[10] Zorinsky E. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P431

[1] ARMSTRONG GA, 1986, 2ND P INT C PROC DEV, P446

[2] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J]. ELECTRONICS LETTERS, 1986, 22 (24) : 1291 - 1293

[3] BRUMHEAD D, 1987, 87 P ESSDERC BOL, P391

[4] COLINGE JP, 1986, ELECTRON LETT, V48, P70

[5] HIGH-PERFORMANCE SOI-CMOS TRANSISTORS IN OXYGEN-IMPLANTED SILICON WITHOUT EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 291 - 293

[6] EARWAKER LG, 1988, 1988 EUR SIL INS WOR

[7] Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7

[8] HOLSTROM RP, 1983, APPL PHYS LETT, V42, P386

[9] POROUS SILICON TECHNIQUES FOR SOI STRUCTURES [J]. IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (06): : 3 - 7

[10] Zorinsky E. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P431