HIGH-PERFORMANCE SOI-CMOS TRANSISTORS IN OXYGEN-IMPLANTED SILICON WITHOUT EPITAXY

被引：15

作者：

DAVIS, JR

REESON, KJ

HEMMENT, PLF

MARSH, CD

机构：

[1] UNIV SURREY,DEPT ELECT & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 07期

关键词：

D O I：

10.1109/EDL.1987.26635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：291 / 293

页数：3

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