DESIGN OF EPITAXIAL CVD REACTORS .1. THEORETICAL RELATIONSHIPS FOR MASS AND HEAT-TRANSFER

被引：6

作者：

KLINGMAN, KJ ^{[1
]}

LEE, HH ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT CHEM ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90219-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：670 / 678

页数：9

共 13 条

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[9] VARIATION OF GAAS EPITAXIAL-GROWTH RATE WITH DISTANCE ALONG SUBSTRATE WITHIN A CONSTANT TEMPERATURE ZONE [J].

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