SPATIALLY MODULATED PHOTOCONDUCTIVITY AT N-ALGAAS/GAAS HETEROJUNCTIONS AND FORMATION OF PERSISTENT CHARGE PATTERNS WITH SUB-MICRON DIMENSIONS

被引：21

作者：

TSUBAKI, K ^{[1
]}

SAKAKI, H ^{[1
]}

YOSHINO, J ^{[1
]}

SEKIGUCHI, Y ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：663 / 665

页数：3

共 7 条

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[4] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J].

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[5] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

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[6]

PANOFSKY WKH, 1972, CLASSICAL ELECTRICIT, P77

[7]

TANOUE T, 1982, 2ND INT S MBE REL SU, P143

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