SPRAY-DEPOSITED ITO-CDTE SOLAR-CELLS

被引：17

作者：

ADEEB, N ^{[1
]}

KRETSU, IV ^{[1
]}

SHERBAN, DA ^{[1
]}

SIMASHKEVICH, AV ^{[1
]}

SUSHKEVICH, KD ^{[1
]}

机构：

[1] KISHINEV STATE UNIV,KISHINEV 277003,MOLDAVIA,USSR

来源：

SOLAR ENERGY MATERIALS | 1987年 / 15卷 / 01期

关键词：

D O I：

10.1016/0165-1633(87)90072-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：9 / 19

页数：11

共 21 条

[1]

ADEEB N, 1985, SB MNOGOKOMPONENTNYE, P109

[2] SPRAY-DEPOSITED ITO-SILICON SIS HETEROJUNCTION SOLAR-CELLS [J].

ASHOK, S ;

SHARMA, PP ;

FONASH, SJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :725-730

[3] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[4]

BUBE RH, 1979, P 2 EUR COMM PHOT SO, P432

[5] PREPARATION OF CONDUCTING AND TRANSPARENT THIN-FILMS OF TIN-DOPED INDIUM OXIDE BY MAGNETRON SPUTTERING [J].

BUCHANAN, M ;

WEBB, JB ;

WILLIAMS, DF .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :213-215

[6] ELECTRONIC CHARACTERIZATION OF INDIUM TIN OXIDE-SILICON PHOTO-DIODES [J].

CHANG, NS ;

SITES, JR .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4833-4837

[7] SPUTTERED INDIUM-TIN OXIDE-CADMIUM TELLURIDE JUNCTIONS AND CADMIUM TELLURIDE SURFACES [J].

COURREGES, FG ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2175-2183

[8] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J].

DONNELLY, JP ;

MILNES, AG .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09) :1468-&

[9]

DUBOW J, 1975, TECH DIG INT ELECTRO, P130

[10]

Feng T., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P519

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