PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE

[1] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 853 - 859

[2] DOMAIN HA, 1964, T METALL SOC AIME, V230, P44

[3] FOLBERTH OG, 1959, Z NATURFORSCH A, V10, P503

[4] GOLDSTEIN B, 1962, SOLID STATE ELECTRON, V5, P411

[5] HUNTINGTON EB, 1958, PHYS REV, V109, P605

[6] A note on the hole theory of diffusion [J]. PHYSICAL REVIEW, 1939, 56 (08): : 814 - 818

[7] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163

[8] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[9] PREPARATION OF SOLID SOLUTIONS OF GAP AND GAAS BY A GAS PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) : 226 - 229

[10] ANNEALING AND ARSENIC OVERPRESSURE EXPERIMENTS ON DEFECTS IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2098 - &

[1] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 853 - 859

[2] DOMAIN HA, 1964, T METALL SOC AIME, V230, P44

[3] FOLBERTH OG, 1959, Z NATURFORSCH A, V10, P503

[4] GOLDSTEIN B, 1962, SOLID STATE ELECTRON, V5, P411

[5] HUNTINGTON EB, 1958, PHYS REV, V109, P605

[6] A note on the hole theory of diffusion [J]. PHYSICAL REVIEW, 1939, 56 (08): : 814 - 818

[7] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163

[8] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[9] PREPARATION OF SOLID SOLUTIONS OF GAP AND GAAS BY A GAS PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) : 226 - 229

[10] ANNEALING AND ARSENIC OVERPRESSURE EXPERIMENTS ON DEFECTS IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2098 - &