STUDY OF GROWTH OF GERMANIUM, AND SILICON, ON TUNGSTEN, BY FIELD EMISSION AND FIELD-ION MICROSCOPY

被引：24

作者：

JANSSEN, AP ^{[1
]}

JONES, JP ^{[1
]}

机构：

[1] UNIV COLL N WALES, SCH ELECTR ENGN SCI, DIV ELECT MAT SCI, DEAN ST, BANGOR, CAERNARVONSHIRE, WALES

来源：

SURFACE SCIENCE | 1974年 / 41卷 / 01期

关键词：

D O I：

10.1016/0039-6028(74)90308-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：257 / 276

页数：20

共 31 条

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