THEORY OF HIGH-TEMPERATURE OXIDE DECOMPOSITION AT THE SIO2/SI INTERFACE

[1] Abramowitz M., 1972, HDB MATH FUNCTIONS, P496

[2] DUFF GFD, 1966, DIFFERENTIAL EQUATIO, P282

[3] HOFMANN K, UNPUB APPL PHYS LETT

[4] HOFMANN K, UNPUB

[5] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 217 - 219

[6] KOBAYASHI M, 1985, J ELECTROCHEM SOC, V132, pC97

[7] OLVER FWJ, 1972, HDB MATH FUNCTIONS, P360

[8] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335

[9] TROMP RM, UNPUB

[10] YANG KH, 1984, J ELECTROCHEM SOC, V131, P1141

[1] Abramowitz M., 1972, HDB MATH FUNCTIONS, P496

[2] DUFF GFD, 1966, DIFFERENTIAL EQUATIO, P282

[3] HOFMANN K, UNPUB APPL PHYS LETT

[4] HOFMANN K, UNPUB

[5] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 217 - 219

[6] KOBAYASHI M, 1985, J ELECTROCHEM SOC, V132, pC97

[7] OLVER FWJ, 1972, HDB MATH FUNCTIONS, P360

[8] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335

[9] TROMP RM, UNPUB

[10] YANG KH, 1984, J ELECTROCHEM SOC, V131, P1141