AN ANALYTICAL MODEL OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS

被引：48

作者：

CASSI, D ^{[1
]}

RICCO, B ^{[1
]}

机构：

[1] UNIV BOLOGNA,DEPT ELECTR,I-40136 BOLOGNA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 06期

关键词：

Phonons - Semiconducting Silicon;

D O I：

10.1109/16.106247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model of the energy distribution of hot electrons in semiconductors derived under the simplifying assumptions of a single nonparabolic conduction band, small space derivative of the external electric field, and emission of optical phonons as dominant energy loss mechanism is presented. The model, indicating that band nonparabolicity makes the electron energy distribution to deviate markedly from the Maxwellian low-field case, is shown to be substantially applicable to the case of silicon MOSFET’s by means of comparisons with Monte Carlo simulations. © 1990 IEEE

引用

页码：1514 / 1521

页数：8

共 7 条

[1] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].