A GENERAL-PURPOSE DEVICE SIMULATOR COUPLING POISSON AND MONTE-CARLO TRANSPORT WITH APPLICATIONS TO DEEP SUB-MICRON MOSFETS

被引:69
作者
VENTURI, F
SMITH, RK
SANGIORGI, EC
PINTO, MR
RICCO, B
机构
[1] UNIV UDINE,DEPT PHYS,I-33100 UDINE,ITALY
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/43.29590
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:360 / 369
页数:10
相关论文
共 16 条
[1]   TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].
BLOTEKJAER, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+
[3]  
Hao C., 1985, SOLID STATE ELECTRON, V28, P733
[4]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[5]  
JENG MC, 1987, IEDM, P710
[6]   TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS [J].
KOBAYASHI, T ;
SAITO, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) :788-792
[7]  
KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424
[8]  
LAUX SE, 1988, 2ND WORKSH NUM MOD P
[9]   MONTE-CARLO CALCULATIONS ON HOT-ELECTRON ENERGY TAILS [J].
PHILLIPS, A ;
PRICE, PJ .
APPLIED PHYSICS LETTERS, 1977, 30 (10) :528-530
[10]  
PINTO MR, 1984, PISCES II POISSON CO