DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH AS A SINGLE QUANTUM-WELL LASER

被引：15

作者：

TAYLOR, GW

COOKE, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.102503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The double-heterostructure optoelectronic switch (DOES) is demonstrated as an N-channel, single quantum well, graded index laser. As a broad-area device, the DOES exhibits excellent electrical switching characteristics of 12 V and 0.04 A cm-2 at the switching condition and 1.8 V and 3.3 A cm -2 at the holding condition with 8.4×10-4 Ω cm2 on state resistance. As a laser, threshold current densities down to 580 A/cm2, loss of 11 cm-1, slope efficiency of 0.35 mA/mW, and total power conversion efficiency of 45% were obtained.

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页码：1308 / 1310

页数：3

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