NANOSTRUCTURES PROCESSING BY FOCUSED ION-BEAM IMPLANTATION

被引：13

作者：

PETROFF, PM ^{[1
]}

LI, YJ ^{[1
]}

XU, Z ^{[1
]}

BEINSTINGL, W ^{[1
]}

SASA, S ^{[1
]}

ENSSLIN, K ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present several novel methods that use a focused ion beam (FIB) processing of quantum well structures for lateral band gap engineering and doping on a nanoscale. Antidots and electron dots have been made by FIB and some of their transport properties are presented. In situ FIB processing of buried stressor structures and localized band bending are also demonstrated as a means of achieving lateral carrier confinement.

引用

页码：3074 / 3078

页数：5

共 21 条

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