OPTICAL-PROPERTIES OF QUANTUM STRUCTURES FABRICATED BY FOCUSED GA+ ION-BEAM IMPLANTATION

被引：11

作者：

BEINSTINGL, W

LI, YJ

WEMAN, H

MERZ, J

PETROFF, PM

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

[3] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High energy focused ion beam implantation of Ga is used to interdiffuse AlGaAs/GaAs quantum wells. Results from low temperature cathodoluminescence, time-decay photoluminescence measurements and photolumuniscence excitation spectroscopy indicate a good quality of the interdiffused quantum wells. The broadened luminescence peaks are explained by spatial inhomogeneities of the interdiffusion. Quantum boxes were fabricated and studied by cathodoluminescence line scanning. The introduction of a few monolayers of InGaAs close to the quantum well resulted in a remarkable improvement of the homogeneity of the interdiffusion.

引用

收藏

页码：3479 / 3482

页数：4

相关论文

共 13 条

[1] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J].

CIBERT, J ;

PETROFF, PM ;

DOLAN, GJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1275-1277

[2] CARRIER CONFINEMENT POTENTIAL IN QUANTUM-WELL WIRES FABRICATED BY IMPLANTATION-ENHANCED INTERDIFFUSION IN THE GAAS-GA1-XALXAS SYSTEM [J].

CIBERT, J ;

PETROFF, PM .

PHYSICAL REVIEW B, 1987, 36 (06) :3243-3246

[3] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

DAWSON, P ;

MOORE, K ;

FOXON, C ;

ELLIOTT, RJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340

[4] MECHANISM OF GA IMPLANTATION-INDUCED INTERMIXING OF GAAS-ALGAAS MATERIAL [J].

HIRAYAMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (02) :L162-L165

[5] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J].

HIRAYAMA, Y ;

TARUCHA, S ;

SUZUKI, Y ;

OKAMOTO, H .

PHYSICAL REVIEW B, 1988, 37 (05) :2774-2777

[6] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAPON, E ;

HARBISON, JP ;

YUN, CP ;

STOFFEL, NG .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :607-609

[7] OPTICAL-PROPERTIES OF QUANTUM WIRES PRODUCED BY STRAIN PATTERNING OF GAAS-ALGAAS QUANTUM-WELLS [J].

KASH, K ;

WORLOCK, JM ;

MAHONEY, DD ;

GOZDZ, AS ;

VANDERGAAG, BP ;

HARBISON, JP ;

LIN, PSD ;

FLOREZ, LT .

SURFACE SCIENCE, 1990, 228 (1-3) :415-417

[8]

KUBENA RL, 1987, APPL PHYS LETT, V51, P960

[9] FOCUSED ION-BEAM CHANNELING EFFECTS AND ULTIMATE SIZES OF GAALAS/GAAS NANOSTRUCTURES [J].

LARUELLE, F ;

BAGCHI, A ;

TSUCHIYA, M ;

MERZ, J ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1990, 56 (16) :1561-1563

[10]

PETROFF PM, 1988, MATER RES SOC S P, V126, P55