GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS

被引：25

作者：

BOSCHETTI, C

RAPPL, PHO

UETA, AY

BANDEIRA, IN

机构：

[1] Instituto Nacional de Pesquisas Espaciais-INPE, Laboratório Associado de Sensores e Materials-LAS, 12201 Sao Jose dos Campos, SP

来源：

INFRARED PHYSICS | 1993年 / 34卷 / 03期

关键词：

D O I：

10.1016/0020-0891(93)90015-Y

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Lead telluride epilayers and p-n junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers Schottky barriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones.

引用

页码：281 / 287

页数：7