GRADED IIA-FLUORIDE BUFFER LAYERS FOR HETEROEPITAXY OF LEAD CHALCOGENIDES AND CDTE ON SI

被引：14

作者：

ZOGG, H

MAIER, P

MELCHIOR, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 80卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90089-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：408 / 416

页数：9

共 37 条

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ASANO, T ;

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[6]

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APPLIED PHYSICS LETTERS, 1983, 43 (09) :828-830

[9] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (10) :1071-1073

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APPLIED PHYSICS LETTERS, 1986, 48 (09) :596-598

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