EFFECT OF LIGHT IRRADIATION ON SULFIDE-TREATED GAAS WITH SIO2 DEPOSITION

被引：9

作者：

KO, HC ^{[1
]}

UCHIDA, K ^{[1
]}

NAKATSUKA, S ^{[1
]}

机构：

[1] GOLDSTAR LTD,CENT RES LAB,SEOUL 137140,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3A期

关键词：

SULFIDE TREATMENT; GAAS; SURFACE PASSIVATION; LIGHT IRRADIATION; DANGLING BONDS;

D O I：

10.1143/JJAP.33.L297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The degradation mechanism of sulfide-treated ad SiO2 deposited GaAs has been studied. The sulfide treatment removes the oxide of GaAs and Ga-dangling bonds, and increases the intensity of photoluminescence. However, by the irradiation of UV light or Ar+ laser, the photoluminescence intensity is reduced substantially. X-ray Photoelectron Spectroscopy (XPS) aalysis ad C-V measurement show that the Ga-S bonds generated by the sulfide treatment become Ga-dangling bonds due to the light irradiation. We believe this is the reason why the photoluminescence intensity decreases, and therefore, it is necessary to avoid light irradiation after sulfide treatment and SiO2 deposition on GaAs in order to maintain the surface-passivation effect.

引用

页码：L297 / L299

页数：3

共 14 条

[1] MARKED REDUCTION OF THE SURFACE-INTERFACE STATES OF GAAS BY (NH4)2SX TREATMENT [J].