RESONANT MAGNETOTUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES

被引：13

作者：

BANDO, H ^{[1
]}

NAKAGAWA, T ^{[1
]}

TOKUMOTO, H ^{[1
]}

OHTA, K ^{[1
]}

KAJIMURA, K ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷

关键词：

D O I：

10.7567/JJAPS.26S3.765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：765 / 766

页数：2

共 6 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[2] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS
GOODHUE, WD
SOLLNER, TCLG
LE, HQ
BROWN, ER
VOJAK, BA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088
[3] RESONANT MAGNETOTUNNELING IN GAALAS-GAAS-GAALAS HETEROSTRUCTURES
MENDEZ, EE
ESAKI, L
WANG, WI
[J]. PHYSICAL REVIEW B, 1986, 33 (04): : 2893 - 2896
[4] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES
NAKAGAWA, T
IMAMOTO, H
KOJIMA, T
OHTA, K
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 73 - 75
[5] NAKAGAWA T, 1987, IN PRESS JPN J APPL, V26
[6] TSUCHIYA M, 1986, APPL PHYS LETT, V49, P88, DOI 10.1063/1.97360