EFFICIENT PHOSPHORUS DOPING OF AMORPHOUS-SILICON CARBIDE FILMS

被引:1
作者
BAPAT, DR [1 ]
NARASIMHAN, KL [1 ]
KUMAR, S [1 ]
SARDESAI, A [1 ]
KSHIRSAGAR, ST [1 ]
机构
[1] NATL CHEM LAB,POONA 411008,MAHARASHTRA,INDIA
关键词
D O I
10.1063/1.102223
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1639 / 1640
页数:2
相关论文
共 5 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS [J].
BULLOT, J ;
SCHMIDT, MP .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 143 (02) :345-418
[3]   PREPARATION OF HIGHLY PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-C ALLOYS FROM A GLOW-DISCHARGE PLASMA [J].
MATSUDA, A ;
YAMAOKA, T ;
WOLFF, S ;
KOYAMA, M ;
IMANISHI, Y ;
KATAOKA, H ;
MATSUURA, H ;
TANAKA, K .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :4025-4027
[4]   CORRELATION BETWEEN BULK P-LAYER PROPERTIES OF A-SI1-XCX-H AND PERFORMANCE OF A-SI1-XCX-H/A-SI-H HETEROJUNCTION SOLAR-CELLS [J].
SCHADE, H ;
SMITH, ZE ;
CATALANO, A .
SOLAR ENERGY MATERIALS, 1984, 10 (3-4) :317-328
[5]  
WEIDER H, 1979, PHYS STATUS SOLIDI B, V92, P99