STABILITY OF PHASE-SEPARATED MICROSTRUCTURE IN LPE-GROWN ZNGAAS EPITAXIAL LAYERS

被引：9

作者：

LEE, K ^{[1
]}

MAHAJAN, S ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT MAT SCI & ENGN,CHARLOTTESVILLE,VA 22903

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

LIQUID PHASE EPITAXY; INGAAS; ZINC;

D O I：

10.1016/0921-5107(94)90049-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase-separated In0.53Ga0.47As epitaxial layers were grown by liquid phase epitaxy on (001) InP substrates. To investigate the stability of the microstructure, two types of Zn addition experiments were carried out: Zn in-diffusion anneals, and growth of Zn-doped layers followed by annealing (pre-doping experiment). The in-diffusion anneal resulted in a homogeneous microstructure, indicating that the phase-separated microstructure is not the ground state in as-grown InGaAs layers. However, annealing of the pre-doped layer has little effect on the microstructure. Arguments have been developed to rationalize these observations.

引用

页码：209 / 213

页数：5

共 15 条

[1] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

NAKAHARA, S ;

STREGE, KE ;

JOHNSTON, WD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4610-4615

[2] DISORDERING OF THE ORDERED STRUCTURE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GA0.5IN0.5P ON (001) GAAS SUBSTRATES BY ZINC DIFFUSION [J].

DABKOWSKI, FP ;

GAVRILOVIC, P ;

MEEHAN, K ;

STUTIUS, W ;

WILLIAMS, JE ;

SHAHID, MA ;

MAHAJAN, S .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2142-2144

[3] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619

[4] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].

HENOC, P ;

IZRAEL, A ;

QUILLEC, M ;

LAUNOIS, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965

[5] EFFECTS OF POST-DIFFUSION ANNEALING ON ZN-DIFFUSED GAAS-SI [J].

KY, NH ;

GANIERE, JD ;

REINHART, FK ;

BLANCHARD, B ;

PFISTER, JC .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5493-5500

[6] DISORDER OF AN INXGA1-XAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

LAIDIG, WD ;

LEE, JW ;

CHIANG, PK ;

SIMPSON, LW ;

BEDAIR, SM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6382-6384

[7] SPINODAL DECOMPOSITION IN INGAASP EPITAXIAL LAYERS [J].

MAHAJAN, S ;

DUTT, BV ;

TEMKIN, H ;

CAVA, RJ ;

BONNER, WA .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :589-595

[8]

MCDEVITT TL, 1991, I PHYS C SER, V117, P477

[9]

MCDEVITT TL, 1989, I PHYS C SER, V100, P173

[10] TRANSMISSION ELECTRON-MICROSCOPE AND TRANSMISSION ELECTRON-DIFFRACTION OBSERVATIONS OF ALLOY CLUSTERING IN LIQUID-PHASE EPITAXIAL (001) GAINASP LAYERS [J].

NORMAN, AG ;

BOOKER, GR .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4715-4720

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