STABILITY OF PHASE-SEPARATED MICROSTRUCTURE IN LPE-GROWN ZNGAAS EPITAXIAL LAYERS

被引：9

作者：

LEE, K ^{[1
]}

MAHAJAN, S ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT MAT SCI & ENGN,CHARLOTTESVILLE,VA 22903

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

LIQUID PHASE EPITAXY; INGAAS; ZINC;

D O I：

10.1016/0921-5107(94)90049-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase-separated In0.53Ga0.47As epitaxial layers were grown by liquid phase epitaxy on (001) InP substrates. To investigate the stability of the microstructure, two types of Zn addition experiments were carried out: Zn in-diffusion anneals, and growth of Zn-doped layers followed by annealing (pre-doping experiment). The in-diffusion anneal resulted in a homogeneous microstructure, indicating that the phase-separated microstructure is not the ground state in as-grown InGaAs layers. However, annealing of the pre-doped layer has little effect on the microstructure. Arguments have been developed to rationalize these observations.

引用

页码：209 / 213

页数：5

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