ACCURATE RBS DETERMINATION OF THE RANGE PROFILE OF IMPLANTED BISMUTH IN SILICON

被引：5

作者：

OCONNOR, DJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 196卷 / 2-3期

关键词：

D O I：

10.1016/0029-554X(82)90120-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：493 / 497

页数：5

共 13 条

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[7] RANGES AND RANGE THEORIES
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[8] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31
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