INVESTIGATION OF SOME UNCOMMON SURFACE TREATMENTS ON GERMANIUM

[1] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SILICON BY STEADY-STATE PHOTOCONDUCTANCE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (03) : 171 - 179

[2] BROWN WL, 1957, SEMICONDUCTOR SURFAC, P111

[3] THE EFFECT OF SOME SURFACE TREATMENTS ON THE CHARACTERISTICS OF FAST STATES ON GERMANIUM SURFACES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 96 - 99

[4] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[5] MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM AND SILICON BY EXTERNAL ELECTRIC FIELDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 10 - 16

[6] MANY A, 1957, SEMICONDUCTOR SURFAC

[7] EFFECT OF CHEMICAL ETCHES ON THE FAST GERMANIUM SURFACE STATES [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 32 (06) : 1791 - 1795

[8] INFLUENCE OF WET AND DRY AMBIENTS ON FAST SURFACE STATES OF GERMANIUM [J]. PHYSICAL REVIEW, 1961, 123 (01): : 135 - &

[9] RZHANOV AV, 1960, SOVIET PHYSICS SOLID, V2, P2166

[10] FIELD EFFECT ON AN ILLUMINATED GE SURFACE AND INVESTIGATION OF THE SURFACE RECOMBINATION PROCESS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1459 - 1464

[1] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SILICON BY STEADY-STATE PHOTOCONDUCTANCE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (03) : 171 - 179

[2] BROWN WL, 1957, SEMICONDUCTOR SURFAC, P111

[3] THE EFFECT OF SOME SURFACE TREATMENTS ON THE CHARACTERISTICS OF FAST STATES ON GERMANIUM SURFACES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 96 - 99

[4] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[5] MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM AND SILICON BY EXTERNAL ELECTRIC FIELDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 10 - 16

[6] MANY A, 1957, SEMICONDUCTOR SURFAC

[7] EFFECT OF CHEMICAL ETCHES ON THE FAST GERMANIUM SURFACE STATES [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 32 (06) : 1791 - 1795

[8] INFLUENCE OF WET AND DRY AMBIENTS ON FAST SURFACE STATES OF GERMANIUM [J]. PHYSICAL REVIEW, 1961, 123 (01): : 135 - &

[9] RZHANOV AV, 1960, SOVIET PHYSICS SOLID, V2, P2166

[10] FIELD EFFECT ON AN ILLUMINATED GE SURFACE AND INVESTIGATION OF THE SURFACE RECOMBINATION PROCESS [J]. PHYSICAL REVIEW, 1957, 105 (05): : 1459 - 1464