STABLE ATOMIC GEOMETRIES OF OXYGEN MICROCLUSTERS IN SILICON

被引：46

作者：

SAITO, M ^{[1
]}

OSHIYAMA, A ^{[1
]}

机构：

[1] NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.38.10711

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10711 / 10717

页数：7

共 33 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].

BACHELET, GB ;

HAMANN, DR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228

[2] SIMULTANEOUS RELAXATION OF NUCLEAR GEOMETRIES AND ELECTRIC CHARGE-DENSITIES IN ELECTRONIC-STRUCTURE THEORIES [J].

BENDT, P ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1983, 50 (21) :1684-1688

[3]

Bragg L., 1965, CRYSTAL STRUCTURES M

[4] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1985, 54 (04) :360-363

[5] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[6]

CAR R, UNPUB

[7] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[8] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

PHYSICAL REVIEW, 1964, 135 (5A) :1381-+

[9] SUBSTITUTIONAL OXYGEN-OXYGEN PAIR IN SILICON [J].

DELEO, GG ;

MILSTED, CS ;

KRALIK, JC .

PHYSICAL REVIEW B, 1985, 31 (06) :3588-3592

[10] Forces in molecules [J].

Feynman, RP .

PHYSICAL REVIEW, 1939, 56 (04) :340-343

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