A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS

被引：44

作者：

GUO, JY ^{[1
]}

WU, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,ADV SEMICOND DEVICE RES LAB,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 09期

关键词：

D O I：

10.1109/16.231571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The exact solution of the 2D Poisson's equation for the fully depleted SOI MOSFET's is derived by using a three-zone Green's function solution technique. Based on the derived 2D potential distribution, the front and back surface potential distributions in the Si film are analytically obtained and their accuracy are verified by 2D numerical analysis. The calculated minimum surface potential and its location are used to analyze the drain-induced barrier-lowering effect and further to develop an analytic threshold-voltage model. Comparisons between the developed analytic threshold-voltage model and the 2D numerical analysis are made. It is shown that excellent agreements are obtained for wide ranges of device structure parameters and applied biases.

引用

页码：1653 / 1661

页数：9

共 10 条

[1] A NEW METHODOLOGY FOR 2-DIMENSIONAL NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES [J].

CHIN, SP ;

WU, CY .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1992, 11 (12) :1508-1521

[2]

CHIN SP, 1992, IEEE T ELECTRON DEV, V39, P1928

[3]

Colinge J.-P., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P817, DOI 10.1109/IEDM.1989.74178

[4] CMOS CIRCUITS MADE IN THIN SIMOX FILMS [J].

COLINGE, JP ;

KAMINS, TI .

ELECTRONICS LETTERS, 1987, 23 (21) :1162-1164

[5]

LIN PS, 1987, IEEE T ELECTRON DEV, V34, P1947

[6] SHORT-CHANNEL MOST THRESHOLD VOLTAGE MODEL [J].

RATNAKUMAR, KN ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :937-948

[7]

Terrill K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P294, DOI 10.1109/IEDM.1988.32815

[8] SHORT-CHANNEL EFFECTS IN SOI MOSFETS [J].

VEERARAGHAVAN, S ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :522-528

[9] 2-DIMENSIONAL ANALYTIC MODELING OF VERY THIN SOI MOSFETS [J].

WOO, JCS ;

TERRILL, KW ;

VASUDEV, PK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) :1999-2006

[10] SHORT-CHANNEL EFFECT IN FULLY DEPLETED SOI MOSFETS [J].

YOUNG, KK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :399-402

← 1 →