ION-BEAM-INDUCED SIMULTANEOUS EPITAXIAL-GROWTH OF ALPHA AND CUBIC FESI2 IN SI(100) AT 320-DEGREES-C

被引：6

作者：

DESIMONI, J ^{[1
]}

BEHAR, M ^{[1
]}

BERNAS, H ^{[1
]}

LIN, XW ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WASHBURN, J ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90675-V

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

By combining room temperature Fe ion implantation in Si (100) at concentrations of 2-18 at.% with 500 keV Si ion beam-induced epitaxial crystallization at 320-degrees-C, we have simultaneously synthesized the cubic and the tetragonal FeSi2 phases. Structural characterization was performed by cross-sectional transmission electron microscopy, Rutherford backscattering spectroscopy and ion channeling. The epitaxial relations to the Si matrix were determined. The results indicate the importance of the interfacial energy for the formation of the alpha-phase whose equilibrium formation temperature is above 950-degrees-C.

引用

页码：755 / 758

页数：4

共 18 条

[1] ELECTRONIC-STRUCTURE OF IRON SILICIDES GROWN ON SI(100) DETERMINED BY PHOTOELECTRON SPECTROSCOPIES [J].