LIQUID-PHASE EPITAXY OF CUBIC FESI2 ON (111) SI INDUCED BY PULSED LASER IRRADIATION

被引:35
作者
GRIMALDI, MG
BAERI, P
SPINELLA, C
LAGOMARSINO, S
机构
[1] CNR,IST METODOL & TECNOL MICROELETTR,I-95129 CATANIA,ITALY
[2] CNR,IST ELETTR STATO SOLIDO,I-00156 ROME,ITALY
关键词
D O I
10.1063/1.106430
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial beta-FeSi2 layers thermally grown on (111) Si substrates have been irradiated by 25 ns ruby laser pulses in the energy density range 0.3-0.7 J/cm2. Rutherford backscattering analyses in combination with the channeling effect have shown that the silicide stoichiometry does not change for irradiations up to an energy density of 0.5 J/cm2, while alignment of the irradiated silicide along the [111] substrate normal direction is observed. Transmission electron diffraction in the plan view configuration showed that this silicide phase has a cubic symmetry with a lattice parameter very similar to that of Si. Diffraction patterns taken along different poles of the substrate indicated that the epitaxial phase is 180-degrees rotated about the [111] normal direction like the B type NiSi2 and CoSi2 silicides.
引用
收藏
页码:1132 / 1134
页数:3
相关论文
共 12 条
  • [1] EPITAXIAL NISI LAYERS ON (111)-ORIENTED SI OBTAINED BY PULSED LASER IRRADIATION
    BAERI, P
    GRIMALDI, MG
    PRIOLO, F
    CULLIS, AG
    CHEW, NG
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 861 - 866
  • [2] SEMICONDUCTING SILICIDE-SILICON HETEROJUNCTION ELABORATION BY SOLID-PHASE EPITAXY
    CHERIEF, N
    DANTERROCHES, C
    CINTI, RC
    TAN, TAN
    DERRIEN, J
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1671 - 1673
  • [3] CHEVRIER J, UNPUB
  • [4] MELTING DYNAMICS OF NISI2/SI UNDER PULSED LASER IRRADIATION
    GRIMALDI, MG
    PRIOLO, F
    BAERI, P
    RIMINI, E
    [J]. PHYSICAL REVIEW B, 1987, 35 (10): : 5117 - 5122
  • [5] EPITAXIAL SILICIDE FORMATION BY MULTI-SHOT IRRADIATION OF NI THIN-FILMS ON SI WITH ND LASER
    HARITH, MA
    ZHANG, JP
    BAERI, P
    RIMINI, E
    CELOTTI, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4560 - 4565
  • [6] GROWTH IN ULTRAHIGH-VACUUM AND STRUCTURAL CHARACTERIZATION OF FESI2 ON SI(111)
    LAGOMARSINO, S
    SCARINCI, F
    GIANNINI, C
    CASTRUCCI, P
    SAVELLI, G
    DERRIEN, J
    CHEVRIER, J
    LETHANH, V
    GRIMALDI, MG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2433 - 2436
  • [7] LAGOMARSINO S, UNPUB
  • [8] EPITAXIAL-FILMS OF SEMICONDUCTING FESI2 ON (001) SILICON
    MAHAN, JE
    GEIB, KM
    ROBINSON, GY
    LONG, RG
    YAN, XH
    BAI, G
    NICOLET, MA
    NATHAN, M
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (21) : 2126 - 2128
  • [9] Mayer J. W., 1982, LASER ANNEALING SEMI
  • [10] ONDA N, UNPUB