EPITAXIAL NISI LAYERS ON (111)-ORIENTED SI OBTAINED BY PULSED LASER IRRADIATION

被引：13

作者：

BAERI, P ^{[1
]}

GRIMALDI, MG ^{[1
]}

PRIOLO, F ^{[1
]}

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：861 / 866

页数：6

共 21 条

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[3]

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[5]

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[8] SOLIDIFICATION KINETICS OF PULSED LASER MELTED SILICON BASED ON THERMODYNAMIC CONSIDERATIONS [J].

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[9] MELTING DYNAMICS OF NISI2/SI UNDER PULSED LASER IRRADIATION [J].

GRIMALDI, MG ;

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[10] EPITAXIAL NISI2 FORMATION BY PULSED LASER IRRADIATION OF THIN NI LAYERS DEPOSITED ON SI SUBSTRATES [J].

GRIMALDI, MG ;

BAERI, P ;

RIMINI, E ;

CELOTTI, G .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :244-246

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