EPITAXIAL NISI2 FORMATION BY PULSED LASER IRRADIATION OF THIN NI LAYERS DEPOSITED ON SI SUBSTRATES

被引:20
作者
GRIMALDI, MG [1 ]
BAERI, P [1 ]
RIMINI, E [1 ]
CELOTTI, G [1 ]
机构
[1] LAMEL CNR,BOLOGNA,ITALY
关键词
D O I
10.1063/1.94313
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:244 / 246
页数:3
相关论文
共 11 条
  • [1] Baeri P., 1982, Laser annealing of semiconductors, P75
  • [2] TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION
    BENTINI, GG
    SERVIDORI, M
    COHEN, C
    NIPOTI, R
    DRIGO, AV
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1525 - 1531
  • [3] EPITAXIAL NISI2 FORMATION BY PULSED ION-BEAM ANNEALING
    CHEN, LJ
    HUNG, LS
    MAYER, JW
    BAGLIN, JEE
    NERI, JM
    HAMMER, DA
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 595 - 597
  • [4] INTERFACIAL ORDER IN EPITAXIAL NISI2
    CHIU, KCR
    POATE, JM
    FELDMAN, LC
    DOHERTY, CJ
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547
  • [5] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS
    CHIU, KCR
    POATE, JM
    ROWE, JE
    SHENG, TT
    CULLIS, AG
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990
  • [6] ELECTRON-BEAM INDUCED REACTIONS IN METAL SI SYSTEMS
    MAJNI, G
    NAVA, F
    OTTAVIANI, G
    LUCHES, A
    NASSISI, V
    CELOTTI, G
    [J]. VACUUM, 1982, 32 (01) : 11 - 18
  • [7] Mayer J. W., 1982, LASER ANNEALING SEMI
  • [8] LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON
    POATE, JM
    LEAMY, HJ
    SHENG, TT
    CELLER, GK
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 918 - 920
  • [9] SILICIDE FORMATION USING A SCANNING CW LASER-BEAM
    SHIBATA, T
    GIBBONS, JF
    SIGMON, TW
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 566 - 569
  • [10] Sigmon T. W., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P511