TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION

被引：30

作者：

BENTINI, GG

SERVIDORI, M

COHEN, C

NIPOTI, R

DRIGO, AV

机构：

[1] UNIV PARIS 07, ECOLE NORM SUPER, PHYS SOLIDES GRP, F-75221 PARIS, FRANCE

[2] UNIV PADUA, IST FIS G GALILEI, I-35100 PADUA, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.330651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1525 / 1531

页数：7

共 25 条

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[6] BENTINI GG, 1981, UNPUB FEB INT WORKSH
[7] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
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[8] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826
[9] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION
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[10] SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON
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