SILICIDE FORMATION USING A SCANNING CW LASER-BEAM

[1] DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDE [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 68 - 70

[2] NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS - SOME SILICIDES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 285 - 287

[3] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[4] Chu W.K., 1978, BACKSCATTERING SPECT, V1st ed., DOI 10.1016/B978-0-12-173850-1.50008-9

[5] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[6] GOLD RE, UNPUBLISHED

[7] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[8] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[9] LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 918 - 920

[10] SIGMON TW, 1979, P ECS M LOS ANGELES

[1] DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDE [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 68 - 70

[2] NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS - SOME SILICIDES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 285 - 287

[3] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[4] Chu W.K., 1978, BACKSCATTERING SPECT, V1st ed., DOI 10.1016/B978-0-12-173850-1.50008-9

[5] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[6] GOLD RE, UNPUBLISHED

[7] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[8] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[9] LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 918 - 920

[10] SIGMON TW, 1979, P ECS M LOS ANGELES