MODULATION OF PHONON STRUCTURES IN PIEZO-TRANSMISSION EXPERIMENTS

被引：1

作者：

MATHIEU, H ^{[1
]}

AUVERGNE, D ^{[1
]}

MERLE, P ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CTR ETUD ELECTR SOLIDES,CNRS,34060 MONTPELLIER,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 05期

关键词：

D O I：

10.1016/0038-1098(76)91488-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：589 / 591

页数：3

共 16 条

[1] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

AUVERGNE, D ;

CAMASSEL, J ;

MATHIEU, H ;

CARDONA, M .

PHYSICAL REVIEW B, 1974, 9 (12) :5168-5177

[2]

AUVERGNE D, IN PRESS

[3] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[4]

BALSLEV I, 1966, P INT C PHYS SEMICON, P101

[5]

CAMASSEL J, 1973, J PHYS S4, P67

[6] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[7] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW, 1966, 150 (02) :690-&

[8] PIEZOTRANSMISSION MEASUREMENTS OF PHONON-ASSISTED TRANSITIONS IN SEMICONDUCTORS .I. GERMANIUM [J].

ENGELER, WE ;

GARFINKE.M ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1967, 155 (03) :693-&

[9] MODULATED PIEZOREFLECTANCE IN SEMICONDUCTORS [J].

GAVINI, A ;

CARDONA, M .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :672-+

[10] DEFORMATION POTENTIALS OF INDIRECT AND DIRECT ABSORPTION EDGES OF ALSB [J].

LAUDE, LD ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1970, 1 (04) :1436-&

← 1 2 →