ELECTRONIC PROPERTIES OF SILICON-THERMALLY GROWN TANTALUM OXIDE INTERFACE

被引：17

作者：

REVESZ, AG ^{[1
]}

ALLISON, JF ^{[1
]}

机构：

[1] COMSAT LABS,CLARKSBURG,MD 20734

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 05期

关键词：

D O I：

10.1109/T-ED.1976.18444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：527 / 529

页数：3

共 13 条

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[4]

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[5]

REESZ AG, TO BE PUBLISHED

[6] OXIDATION OF TANTALUM FILM ON SILICON [J].

REVESZ, AG ;

ALLISON, J ;

KIRKENDALL, T ;

REYNOLDS, J .

THIN SOLID FILMS, 1974, 23 (03) :S63-S66

[7]

REVESZ AG, 1968, RCA REV, V29, P22

[8]

REVESZ AG, TO BE PUBLISHED

[9] CHARACTERIZATION CONTROL AND USE OF DIELECTRIC CHARGE EFFECTS IN SILICON TECHNOLOGY [J].

SZEDON, JR ;

HANDY, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01) :1-+

[10] UV-STIMULATED PHOTOCURRENT SPECTROSCOPY AND TRAPPING KINETICS OF A 2.1-EV TRAP IN ANODIC TA2O5 FILMS [J].

THOMAS, JH .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :835-842

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