OXIDATION OF TANTALUM FILM ON SILICON

被引：8

作者：

REVESZ, AG ^{[1
]}

ALLISON, J ^{[1
]}

KIRKENDALL, T ^{[1
]}

REYNOLDS, J ^{[1
]}

机构：

[1] COMSAT LABS, CLARKSBURG, MD 20734 USA

来源：

THIN SOLID FILMS | 1974年 / 23卷 / 03期

关键词：

D O I：

10.1016/0040-6090(74)90024-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：S63 / S66

页数：4

共 9 条

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[3]

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[5] ELLIPSOMETER STUDY OF ANODIC OXIDES FORMED ON SPUTTERED TANTALUM AND TANTALUM-ALUMINUM ALLOY FILMS [J].

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[7] UV-STIMULATED PHOTOCURRENT SPECTROSCOPY AND TRAPPING KINETICS OF A 2.1-EV TRAP IN ANODIC TA2O5 FILMS [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :835-842

[8] THE DETERMINATION OF THE THICKNESS, DIELECTRIC CONSTANT, AND OTHER PROPERTIES OF ANODIC OXIDE FILMS ON TANTALUM FROM THE INTERFERENCE COLOURS [J].

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PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 244 (1236) :41-53

[9] THIN FILM DIELECTRIC MATERIALS FOR MICROELECTRONICS [J].

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PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1564-+

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