HALL-MOBILITY IN UNDOPED MICROCRYSTALLINE SI-H,CL FILMS

被引：1

作者：

AUGELLI, V ^{[1
]}

MURRI, R ^{[1
]}

LIGONZO, T ^{[1
]}

机构：

[1] CNR,GRP NAZL STRUCT MAT,BARI,ITALY

来源：

关键词：

D O I：

10.1063/1.94321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：266 / 267

页数：2

共 12 条

[1] AUGELLI V, UNPUB J NONCRYST SOL
[2] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON
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[3] BOETTGER H, 1977, PHYS STATUS SOLIDI B, V81, P433
[4] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2
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[J]. THIN SOLID FILMS, 1980, 67 (01) : 103 - 107
[5] THE HALL-MOBILITY OF CARRIERS HOPPING IN AN IMPURITY BAND
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[7] SIGN OF HALL-EFFECT IN HOPPING CONDUCTION
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[8] HALL-EFFECT IN ORDERED AND DISORDERED SYSTEMS
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[9] SIGN OF HALL-COEFFICIENT IN HOPPING-TYPE CHARGE-TRANSPORT
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[J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (01): : 225 - 233
[10] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON
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[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187