EFFECT OF OXIDATION-INDUCED STACKING-FAULTS ON DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THERMAL SILICON DIOXIDE

被引：6

作者：

SHIRAI, H ^{[1
]}

KANAYA, K ^{[1
]}

YAMAGUCHI, A ^{[1
]}

SHIMURA, F ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5651 / 5653

页数：3

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