EFFECTS OF DISLOCATIONS ON PROPERTIES OF METAL SIO2-SILICON CAPACITORS

被引:13
作者
MCCAUGHAN, DV [1 ]
WONSIEWICZ, BC [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1063/1.1663168
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:4982 / 4985
页数:4
相关论文
共 10 条
[1]   DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].
CASTAGNE, R ;
VAPAILLE, A .
SURFACE SCIENCE, 1971, 28 (01) :157-+
[2]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[3]   NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION [J].
HSIEH, CM ;
MAHER, DM .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1302-1306
[4]   DISLOCATION ENERGY LEVEL IN SILICON FROM DISLOCATION VELOCITY MEASUREMENTS [J].
PATEL, JR ;
FRISCH, HL .
APPLIED PHYSICS LETTERS, 1968, 13 (01) :32-&
[5]   DISSOCIATION OF DISLOCATIONS IN SILICON [J].
RAY, ILF ;
COCKAYNE, DJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 325 (1563) :543-&
[6]   OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON [J].
RAY, ILF ;
COCKAYNE, DJ .
PHILOSOPHICAL MAGAZINE, 1970, 22 (178) :853-&
[7]  
SCHMIDT R, 1969, 135 NAT M EL SOC NEW
[9]   OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. ELECTRICAL EFFECTS IN PN DIODES [J].
VARKER, CJ ;
RAVI, KV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :272-287
[10]   ELECTRICAL PROPERTIES OF METAL-SIO2-SILICON STRUCTURES UNDER MECHANICAL-STRESS [J].
WONSIEWI.BC ;
MCCAUGHA.DV .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5476-5479