MULTISTEP REPEATED ANNEALING FOR CZ-SILICON WAFERS - OXYGEN AND INDUCED DEFECT BEHAVIOR

被引：25

作者：

SHIMURA, F

TSUYA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 09期

关键词：

D O I：

10.1149/1.2124375

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2089 / 2095

页数：7

共 27 条

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