AMORPHOUS-SILICON DEPOSITION RATES IN DIODE AND TRIODE DISCHARGES

[1] Carlson D. E., 1980, Polycrystalline and amorphous thin films and devices, P175

[2] CHATHAM H, 1984, THESIS U COLORADO

[3] GALLAGHER A, 1984, DIAGNOSTICS GLOW DIS

[4] GALLAGHER A, 1982, DIAGNOSTICS GLOW DIS

[5] ICHIMURA T, 1985, 18TH P IEEE PHOT SPE

[6] GAS-PHASE FREE-RADICAL REACTIONS IN THE GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM SILANE AND DISILANE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2290 - 2291

[7] LIFETIME OF DOMINANT RADICALS FOR THE DEPOSITION OF A-SI-H FROM SIH4 AND SI2H6 GLOW-DISCHARGES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 687 - 690

[8] McDaniel E., 1964, COLLISION PHENOMENA

[9] MONOSILICON AND DISILICON RADICALS IN SILANE AND SILANE-ARGON DC DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3402 - 3411

[10] ROBERTSON R, 1985, THESIS U COLORADO

[1] Carlson D. E., 1980, Polycrystalline and amorphous thin films and devices, P175

[2] CHATHAM H, 1984, THESIS U COLORADO

[3] GALLAGHER A, 1984, DIAGNOSTICS GLOW DIS

[4] GALLAGHER A, 1982, DIAGNOSTICS GLOW DIS

[5] ICHIMURA T, 1985, 18TH P IEEE PHOT SPE

[6] GAS-PHASE FREE-RADICAL REACTIONS IN THE GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM SILANE AND DISILANE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2290 - 2291

[7] LIFETIME OF DOMINANT RADICALS FOR THE DEPOSITION OF A-SI-H FROM SIH4 AND SI2H6 GLOW-DISCHARGES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 687 - 690

[8] McDaniel E., 1964, COLLISION PHENOMENA

[9] MONOSILICON AND DISILICON RADICALS IN SILANE AND SILANE-ARGON DC DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3402 - 3411

[10] ROBERTSON R, 1985, THESIS U COLORADO