GROWTH OF GAINAS/INP BY THE VAPOR-PHASE EPITAXY HYDRIDE METHOD

[11] HARROUS M, 1985, THESIS U CLERMONT 2

[12] HOLSEN G, 1979, PROG CRYSTAL GROWTH, V2, P375

[13] HOLSEN G, 1979, PROG CRYST GROWTH CH, V2, P309

[14] VAPOR-PHASE EPITAXIAL-GROWTH OF INP-BASED COMPOUND SEMICONDUCTOR-MATERIALS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 109 - 116

[15] VAPOR-PHASE GROWTH OF INP FROM THE IN-PH3-HCL-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 73 - 82

[16] JURGENSEN H, SFB202 AACH TU I SEM

[17] TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE [J]. ELECTRONICS LETTERS, 1983, 19 (13) : 473 - 474

[18] LASSALLE F, 1987, THESIS U CLERMONT 2

[19] LOYAU JB, 1975, J CRYSTAL GROWTH, V29, P187

[20] VAPOR-PHASE GROWTH OF MIXED III-V-COMPOUNDS IN THE GA-IN-AS-P SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 269 - 288

[11] HARROUS M, 1985, THESIS U CLERMONT 2

[12] HOLSEN G, 1979, PROG CRYSTAL GROWTH, V2, P375

[13] HOLSEN G, 1979, PROG CRYST GROWTH CH, V2, P309

[14] VAPOR-PHASE EPITAXIAL-GROWTH OF INP-BASED COMPOUND SEMICONDUCTOR-MATERIALS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 109 - 116

[15] VAPOR-PHASE GROWTH OF INP FROM THE IN-PH3-HCL-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 73 - 82

[16] JURGENSEN H, SFB202 AACH TU I SEM

[17] TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE [J]. ELECTRONICS LETTERS, 1983, 19 (13) : 473 - 474

[18] LASSALLE F, 1987, THESIS U CLERMONT 2

[19] LOYAU JB, 1975, J CRYSTAL GROWTH, V29, P187

[20] VAPOR-PHASE GROWTH OF MIXED III-V-COMPOUNDS IN THE GA-IN-AS-P SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 269 - 288