TRUE CARRIER LIFETIME MEASUREMENTS OF SEMICONDUCTOR-LASERS

被引：41

作者：

SHTENGEL, GE

ACKERMAN, DA

MORTON, PA

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 20期

关键词：

CARRIER LIFETIME; LASER VARIABLE MEASUREMENT; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19951191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Differential carrier lifetimes of semiconductor lasers are obtained directly from the device impedance measurements. This new technique gives accurate lifetimes down to low bias currents, al which correct lifetimes are an order of magnitude higher than those obtained by a commonly used optical technique. Correct lifetimes reconcile the results of early PL studies and suggest much higher carrier concentrations.

引用

页码：1747 / 1748

页数：2

共 8 条

[1]

FLYNN EJ, UNPUB IEEE J QUANTUM

[2]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[3] THE INTRINSIC ELECTRICAL EQUIVALENT-CIRCUIT OF A LASER DIODE [J].