HEAVY DOPED N-TYPE SINGLE CRYSTAL EPITAXIAL LAYERS OF GALLIUM ARSENIDE

被引：9

作者：

WILLIAMS, FV

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(64)90135-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：833 / 834

页数：2

共 10 条

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[2]

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NEWMAN, RL ;

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[7]

TRUMBORE FA, 1963, ELECTROCHEM SOC M PI

[8] BEHAVIOR OF SELENIUM IN GALLIUM ARSENIDE [J].

VIELAND, LJ ;

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[9]

WILLIAMS FV, 1961, J ELECTROCHEM SOC, V108, pC177

[10]

WINOGRADOFF NN, UNPUB SOLID STATE CO