NITROCELLULOSE AS A SELF-DEVELOPING RESIST FOR FOCUSED ION-BEAM LITHOGRAPHY

被引：10

作者：

KANEKO, H ^{[1
]}

YASUOKA, Y ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：982 / 985

页数：4

共 6 条

[1] NITROCELLULOSE AS A SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

DEUTSCH, TF ;

EFREMOW, NN ;

DONNELLY, JP ;

WOODHOUSE, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1178-1181

[2] SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

DEUTSCH, TF ;

DEGRAFF, PD ;

KROHN, KE ;

STERN, LA .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :74-76

[3] FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS [J].

HARAKAWA, K ;

YASUOKA, Y ;

GAMO, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :355-357

[4] THE FOCUSED ION-BEAM AS AN INTEGRATED-CIRCUIT RESTRUCTURING TOOL [J].

MELNGAILIS, J ;

MUSIL, CR ;

STEVENS, EH ;

UTLAUT, M ;

KELLOGG, EM ;

POST, RT ;

GEIS, MW ;

MOUNTAIN, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :176-180

[5] FOCUSED ION-BEAM ETCHING OF NITROCELLULOSE [J].

YASUOKA, Y ;

HARAKAWA, K ;

GAMO, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :405-408

[6] SELF-DEVELOPING CHARACTERISTICS OF NITROCELLULOSE EXPOSED TO ION-BEAMS [J].

YASUOKA, Y ;

HARAKAWA, K ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09) :L1453-L1455

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