FOCUSED ION-BEAM ETCHING OF NITROCELLULOSE

被引：5

作者：

YASUOKA, Y ^{[1
]}

HARAKAWA, K ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 408

页数：4

共 5 条

[1] NITROCELLULOSE AS A SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

DEUTSCH, TF ;

EFREMOW, NN ;

DONNELLY, JP ;

WOODHOUSE, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1178-1181

[2] NITROCELLULOSE AS A POSITIVE OR NEGATIVE SELF-DEVELOPING RESIST [J].

GEIS, MW ;

RANDALL, JN ;

MOUNTAIN, RW ;

WOODHOUSE, JD ;

BROMLEY, EI ;

ASTOLFI, DK ;

ECONOMOU, NP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :343-346

[3] SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

DEUTSCH, TF ;

DEGRAFF, PD ;

KROHN, KE ;

STERN, LA .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :74-76

[4] FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS [J].

HARAKAWA, K ;

YASUOKA, Y ;

GAMO, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :355-357

[5]

SHIOKAWA T, 1983, 14TH P S ION IMPL SU, P173

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