SECONDARY ION MASS-SPECTROMETRY - DEPTH PROFILING OF SHALLOW AS IMPLANTS IN SILICON AND SILICON DIOXIDE

被引：41

作者：

VANDERVORST, W

MAES, HE

DEKEERSMAECKER, RF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 05期

关键词：

D O I：

10.1063/1.334142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1425 / 1433

页数：9

共 54 条

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