PHOTOLUMINESCENCE FROM CARRIERS CONFINED AT A GAXIN1-XAS-INP SINGLE HETEROJUNCTION INTERFACE

被引：10

作者：

YU, PW

PENG, CK

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1546 / 1548

页数：3

共 11 条

[1] OPTICAL-ABSORPTION COEFFICIENT OF IN1-XGAXAS/INP
BACHER, FR
BLAKEMORE, JS
EBNER, JT
ARTHUR, JR
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2551 - 2557
[2] GROWTH AND PHOTO-LUMINESCENCE SPECTRA OF HIGH-PURITY LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS
BHATTACHARYA, PK
RAO, MV
TSAI, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5096 - 5102
[3] EXCITONIC TRANSITIONS IN LATTICE-MATCHED GA1-XINXAS/INP QUANTUM WELLS
GERSHONI, D
TEMKIN, H
PANISH, MB
[J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7870 - 7873
[4] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
GOETZ, KH
BIMBERG, D
JURGENSEN, H
SELDERS, J
SOLOMONOV, AV
GLINSKII, GF
RAZEGHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552
[5] QUANTUM HALL-EFFECT IN IN0.53GA0.47AS-INP HETEROJUNCTIONS WITH 2 POPULATED ELECTRIC SUBBANDS
GULDNER, Y
VIEREN, JP
VOOS, M
DELAHAYE, F
DOMINGUEZ, D
HIRTZ, JP
RAZEGHI, M
[J]. PHYSICAL REVIEW B, 1986, 33 (06) : 3990 - 3993
[6] PHOTO-LUMINESCENCE AND IMPURITY CONCENTRATION IN GAXIN1-XASYP1-Y ALLOYS LATTICE-MATCHED TO INP
PEARSALL, TP
EAVES, L
PORTAL, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1037 - 1047
[7] PEARSALL TP, 1982, GAINASP ALLOY SEMICO
[8] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
HIRTZ, JP
ZIEMELIS, UO
DELALANDE, C
ETIENNE, B
VOOS, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587
[9] SWAMINATHAN V, 1985, J VAC SCI TECHNOL B, V3, P631
[10] CHARACTERISTIC FEATURES OF TWO-DIMENSIONAL ELECTRONIC-STRUCTURE IN GAINAS/INP HETEROJUNCTIONS
YAMADA, S
TAGUCHI, A
SUGIMURA, A
[J]. SURFACE SCIENCE, 1986, 170 (1-2) : 480 - 485

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