ELECTRONIC-PROPERTIES OF THE PRECRYSTALLIZATION REGIME OF GERMANIUM - A PHOTOEMISSION-STUDY

被引：11

作者：

PERFETTI, P

QUARESIMA, C

CAPASSO, C

CAPOZI, M

EVANGELISTI, F

BOSCHERINI, F

PATELLA, F

机构：

[1] UNIV LA SAPIENZA,DIPARTIMENTO FIS,ROMA,ITALY

[2] UNIV ROMA,ROMA,ITALY

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.6998

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6998 / 7004

页数：7

共 23 条

[1] ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON
ALLAN, DC
JOANNOPOULOS, JD
POLLARD, WB
[J]. PHYSICAL REVIEW B, 1982, 25 (02) : 1065 - 1080
[2] APPLEBAUM JA, 1978, SURF SCI, V70, P654
[3] STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-GERMANIUM - AMORPHOUS-GERMANIUM .3. OPTICAL-PROPERTIES
CONNELL, GAN
TEMKIN, RJ
PAUL, W
[J]. ADVANCES IN PHYSICS, 1973, 22 (05) : 643 - 665
[4] EASTMAN DE, 1974, TETRAHEDRALLY BONDED, P95
[5] CORE EXCITONS IN AMORPHOUS-SEMICONDUCTORS
EVANGELISTI, F
PATELLA, F
RIEDEL, RA
MARGARITONDO, G
FIORINI, P
PERFETTI, P
QUARESIMA, C
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (26) : 2504 - 2507
[6] STRUCTURE OF VAPOR-DEPOSITED GE FILMS AS A FUNCTION OF SUBSTRATE-TEMPERATURE
EVANGELISTI, F
GAROZZO, M
CONTE, G
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7390 - 7396
[7] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS
GARNER, CM
LINDAU, I
MILLER, JN
PIANETTA, P
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 372 - 375
[8] HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION
GAROZZO, M
CONTE, G
EVANGELISTI, F
VITALI, G
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1070 - 1072
[9] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .2. ELECTRONIC-STRUCTURE OF GERMANIUM
GROBMAN, WD
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW B, 1975, 12 (10): : 4405 - 4433
[10] THEORY OF CORE EXCITONS
HJALMARSON, HP
BUTTNER, H
DOW, JD
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 6010 - 6019