HALL-EFFECT ANALYSIS ON NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON

被引：8

作者：

BIGGERI, U ^{[1
]}

BORCHI, E ^{[1
]}

BRUZZI, M ^{[1
]}

LAZANU, S ^{[1
]}

机构：

[1] INST ATOM PHYS,BUCHAREST,ROMANIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 360卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(94)01710-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The electrical conductivity and the Hall coefficient of high resistivity n-type silicon have been measured before and after irradiation with high fluences of fast neutrons. A model based on the dopant concentration changes observed after irradiation is proposed to describe the sample resistivity dependence on the neutron fluence. From the fit of the experimental data, the initial dopant concentrations and the parameters describing donor and acceptor modifications have been determined.

引用

页码：131 / 133

页数：3

共 8 条

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