A GAAS-MESFET OSCILLATOR QUASI-LINEAR DESIGN METHOD

被引：7

作者：

ABE, H

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1986年 / 34卷 / 01期

关键词：

D O I：

10.1109/TMTT.1986.1133275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：19 / 25

页数：7

共 9 条

[1]

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[2]

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[4] DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

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[7]

SONE J, 1976, NOV NAT CONV IECE

[8] GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS [J].

TAJIMA, Y ;

WRONA, B ;

MISHIMA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :171-175

[9] ON OSCILLATOR DESIGN FOR MAXIMUM POWER [J].

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HOUSELANDER, L ;

SPENCE, R .

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